منابع مشابه
Modeling particle formation during low-pressure silane oxidation: Detailed chemical kinetics and aerosol dynamics
A detailed chemical kinetic model is presented for silicon oxide clustering that leads to particle nucleation during low-pressure silane oxidation. Quantum Rice–Ramsperger–Kassel theory was applied to an existing high-pressure silane oxidation mechanism to obtain estimates for the pressure dependence of rate parameters. Four classes of clustering pathways were considered based on current knowle...
متن کاملSilane and bonding of Resins to Ceramic
Silane and bonding of Resins to Ceramic Dr. K. Seyyedan* - Dr. M. Kalalipoor** - Dr. M. Javan***Assistant Professor of Fixed Prosthodontics Dept., Faculty of Dentistry, Shaheed Beheshti University of Medical Sciences. **Resident of Fixed Prosthodontics Dept., Faculty of Dentistry, Shaheed Beheshti University of Medical Sciences. Background and Aim: When bonding between two different dental mate...
متن کاملPressure-induced metallization of silane.
There is a great interest in electronic transitions in hydrogen-rich materials under extreme conditions. It has been recently suggested that the group IVa hydrides such as methane (CH(4)), silane (SiH(4)), and germane (GeH(4)) become metallic at far lower pressures than pure hydrogen at equivalent densities because the hydrogen is chemically compressed in group IVa hydride compounds. Here we re...
متن کاملTrimethyl(triphenylmethoxy)silane
In the title mol-ecule, C(22)H(24)OSi, the Si-O-C angle is 139.79 (11)°, the O-C-C angles of the triphenyl-meth-oxy group are in the range 106.13 (13)-109.22 (14)° and the O-Si-C angles of the trimethyl-sil-yloxy group are in the range 103.08 (10)-113.53 (10)°. In the crystal, face-to-face π-π interactions are observed between the phenyl rings [centroid separation = 4.194 (1) Å, interplanar spa...
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ژورنال
عنوان ژورنال: Nature
سال: 1935
ISSN: 0028-0836,1476-4687
DOI: 10.1038/135397b0